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Název:		Compreshive analytical chemistry. Vol XXIII, Analytical and biomedical applications of ion-selective field-effect transistors
Autor:
Rok vydání:		1988
Identifikátory:		9780444429766

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Anotace:	This latest volume of Wilson & Wilson's Comprehensive Analytical Chemistry presents a comprehensive, up-to-date account of the theory, design and fabrication of ion-selective field-effect transistors (ISFETs) and their analytical and biomedical applications. It encompasses not only the physicochemical phenomena which control the interaction between the solid-state transducer and the contacting electrolyte, but also the interaction between the sensor and the associated electronic system used to process the resultant signal.The introductory chapter summarizes the history of the development of ISFET devices. After an account of the fundamental principles of the MOS field-effect transistor in Chapter 2, the operational mechanism of the inorganic-gate ISFET is described in the following chapter, with emphasis on recent insights into interfacial phenomena occurring at the electrolyte-insulator interface, including the effects of various surface modification procedures. The inorganic-gate ISFET forms the basis of several other FET-based transducers including those which possess additional electroactive gate films (i.e. those based on solid-state or polymeric materials), immunologically-activated gates, and also composite films suitable for the detection and measurement of dissolved carbon dioxide; these are described in Chapters 4 and 5. The theoretical and practical aspects of appropriate reference electrodes are considered in the next chapter, and the fabrication and encapsulation of ISFET devices is described fully in Chapter 7. The next two chapters provide coverage of the electronic instrumentation requirements for device operation, and the relevant characteristics of ISFET devices. Chapter 10 relates the present state of their application both in the laboratory and for biomedical analysis. Finally, some recent advances in ISFET and ISFET-related devices are described in order to indicate the nature of anticipated trends in device design, and the potential for further development and exploitation.The book thus provides the first complete description of all features of ISFETs: theory, design, technology and application.
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